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CBM-DC2 Datasheet(PDF) 2 Page - COREBAI Microelectronics (Beijing) Co., Ltd. |
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CBM-DC2 Datasheet(HTML) 2 Page - COREBAI Microelectronics (Beijing) Co., Ltd. |
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2 / 45 page ![]() 2 www.corebai.com CBM-DC2 产品手册 电子特性 最大绝对限度值 电源电压 Vcc VS. GND Vio VS. GND 输出电流(Iout) 存储温度(Tstg) 最大结温(Tj) -0.3 to 4 -0.3 to 7 ±30 -65 to 150 125 V V mA ℃ ℃ 推荐使用工作条件 Symbol Parameter Conditions Min Typ Max Unit Vcc Core supply voltage* Vio > Vcc 1.8 3.6 V Vio I/O supply voltage 1.8 5.5 V tri Normal Input Rising Time 50 ns tfa Normal Input Falling Time 50 ns tri Schmitt Trigger Rising Time 5 ms tfa Schmitt Trigger Falling Time 5 ms Ta Ambient Temperature Tj must not exceed 125°C -40 120 ℃ *包括晶振管脚 XIN,XOUT,Clk32In,Clk32Out 直流电特性(Vio = Vcc = 3.3 V±0.3 V, Tj = -40 to +85℃) Symbol Parameter Conditions Min Typ Max Unit I32 Current 32 kHz Icc + Iio, only 32kHz oscil-lator running, Vcc = 3.6 V 4.5 µA Ihs Current 4 Mhz : Icc + Iio, only ClkHS running cont. at 4MHz, Vcc = 3.6 V 260 µA Itmu Current time measuring unit only during active time measurement 15 mA Iddq Quiescent current all clocks off, Vio = Vcc = 3.6V @ 85℃ <150 nA Il Input Leakage Current -1 +1 µA Voh Ioh= tbd mA Vio=Min. Vio-0.4 V Vol Iol = tbd mA, Vio=Min 0.4 V Vih LVTTL Level, Vio = Max. 2.0 V Vil LVTTL Level, Vio = Min. 0.8 V Vth 1.1 2.4 V Vtl 0.6 1.8 V Vh 0.1 V |
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