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AX68004LF Datasheet(PDF) 25 Page - ASIX Electronics Corporation |
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AX68004LF Datasheet(HTML) 25 Page - ASIX Electronics Corporation |
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25 / 57 page ![]() 25 AX6800x 2/4-Port USB KVM Switch SoC Copyright © 2015 ASIX Electronics Corporation. All rights reserved. 2.4 Flash Controller and On-Chip Flash Memory 2.4.1 Program Loader The Program Loader activates right after chip reset or software reboot command and performs copying CPU program code from on-chip Flash memory to on-chip 8K bytes Program SRAM for “Program Code Mirroring”. 2.4.2 Flash Controller and In-Application Programming Flash Controller supports Flash memory access related Word Read, Word Write, Sector Erase, Chip Erase command signal generation needed for CPU’s special SFR access and software DMA’s write access. Along with Software DMA controller, it supports various DMA transfer direction such as Flash memory to External Data Memory (P2D), External Data Memory (xDATA) to Flash memory (D2P), Flash memory to Flash memory (P2P), etc. for so-called In-Application Programming (IAP) function during run-time. For each Word Write access, Flash Controller will perform the read back check automatically. If the read back check encountered the mismatch happened, the Flash Controller will interrupt CPU to inform the current Word Write access is incorrect. 2.4.3 In-System Programming ISP Controller supports In-System Programming (ISP) function through either UART 0 interface to program on-chip Flash memory. Upon enabled (via BURN_FLASH_EN pin), ISP controller allows on-chip Flash memory to be programmed by ASIX’s Flash Programming utility software on a PC with a standard RS-232 port. The link speed (baud rate) of UART 0 used for communicating to the PC’s RS-232 port can be selectable between 921.6K or 115.2K bps (via BURN_FLASH_921K pin). When developing AX6800x software or manufacturing AX6800x based systems, ASIX’s Flash Programming utility can provide easy and fast Flash memory programming capability. 2.4.4 On-Chip Flash Memory The main features of the on-chip Flash memory are listed below, Requires only 1.8V power for read, erase and write operations Fast Read, Write and Erase Read access time: 40ns Write (programming) access time: 20us (typical) Page erase time: 2ms Mass Erase time: 10ms Minimum 100,000 erase/program cycles Minimum 10 years data retention under maximum 20 times pre-cycles Program code download protection in hardware to prevent unauthorized program code download. |
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