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VBA1302 Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # VBA1302
Description  N-Channel 30-V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

VBA1302 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 30-V (D-S) MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
•
TrenchFET® Gen II
•
Ultra Low On-Resistance Using High
Density TrenchFET Power MOSFET
Technology
APPLICATIONS
•
Synchronous Buck Low-Side
- Notebook
- Server
- Workstation
•
Synchronous Rectifier-POL
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
30
0.0020 at VGS = 10 V
25
0.0030 at VGS = 4.5 V
22
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
25
17
A
TA = 70 °C
20
13
Pulsed Drain Current (10 µs Pulse Width)
IDM
70
Continuous Source Current (Diode Conduction)a
IS
2.9
1.3
Avalanche Current
IAS
50
Maximum Power Dissipationa
TA = 25 °C
PD
3.5
1.6
W
TA = 70 °C
2.2
1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 10 s
RthJA
29
35
°C/W
Steady State
67
80
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
13
16
1
VBA1302
www.VBsemi.com


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