VBA1302 datasheet(3/8 Pages) VBSEMI

Part #	VBA1302

Description	N-Channel 30-V (D-S) MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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3 / 8 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.001

0.002

0.003

0.004

0.005

0.006

1020304050

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

102030405060

VDS = 15 V

ID = 20 A

Qg - Total Gate Charge (nC)

1.0

1.2

0.1

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

1700

3400

5100

6800

8500

Crss

VDS - Drain-to-Source Voltage (V)

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

VGS = 10 V

ID = 25 A

TJ - Junction Temperature (°C)

0.000

0.003

0.006

0.009

0.012

0.015

02468

ID = 25 A

VGS - Gate-to-Source Voltage (V)

VBA1302

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