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VBJ2102M Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # VBJ2102M
Description  P-Channel 100-V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

VBJ2102M Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0
0.3
0.6
0.9
1.2
1.5
TJ = 150 °C
VSD -Source-to-Drain Voltage (V)
TJ = 25 °C
0.1
0.4
0.7
1.0
ID = 250 µA
TJ - Temperature (°C)
ID =5mA
- 0.2
- 0.5
- 50
- 25
0
25
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0
246
8
10
VGS - Gate-to-SourceVoltage (V)
TJ = 25 °C
TJ = 125 °C
0
40
80
120
160
200
0
1
1
1
0
0
.
0
0.01
Time (s)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
1000
100
1
0.01
0.1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
1ms
10 ms
100 ms
10
TA = 25 °C
Single Pulse
Limited byRDS(on)*
1s
DC
10 s
4
VBJ2102M
www.VBsemi.com



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