VBJ2102M datasheet(1/8 Pages) VBSEMI

Part #	VBJ2102M

Description	P-Channel 100-V (D-S) MOSFET

PDF	8 Pages

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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P-Channel 100-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•100% Rg and UIS Tested

APPLICATIONS

• Active Clamp in Intermediate DC/

DC Power Supplies

•

H-Bridge

High

Side

Switch

for

Lighting Application

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

Qg (Typ.)

- 100

0.200 at VGS = - 10 V

- 3.0

13.2 nC

0.230 at VGS = - 6 V

- 2.4

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 3.0

A

TC = 70 °C

-2.1

TA = 25 °C

- 2a, b

TA = 70 °C

- 1.6a, b

Pulsed Drain Current

IDM

- 12

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 4.9

TA = 25 °C

- 2.5a, b

Avalanche Current

L = 0.1 mH

IAS

- 15

Single-Pulse Avalanche Energy

EAS

11.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

6.5

W

TC = 70 °C

4.8

TA = 25 °C

3.1a, b

TA = 70 °C

2a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

t

10 s

RthJA

33

40

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

17

21

Available

VBJ2102M

www.VBsemi.com

SOT-223

G

D

S

D

1

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VBJ2102M Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

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