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VBJ2102M Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part # VBJ2102M
Description  P-Channel 100-V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

VBJ2102M Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
0
246
8
10
VDS - Drain-to-Source Voltage (V)
V
GS =10 V thru 6 V
V
GS =5 V
V
GS =4 V
0.1
0.2
0.3
0.4
0.5
0.6
04
8
12
16
20
ID - DrainCurrent (A)
VGS =10 V
VGS =6 V
0
2
4
6
8
10
0
ID =3A
Qg - TotalGateCharge(nC)
VDS =100 V
VDS =50 V
VDS =75 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0123
456
VGS - Gate-to-Source Voltage (V)
TC =25
TC = 125 °C
T = - 55 °C
C
Crss
0
240
480
720
960
1200
020
40
60
80100
Ciss
VDS - Drain-to-Source Voltage (V)
Coss
0.4
0.7
1.0
1.3
1.6
1.9
2.2
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
I
D =4A
V
GS =10 V
V
GS =6 V
4
8
12
16
20
VBJ2102M
www.VBsemi.com
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