FPD3000P100

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Released: 6/27/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

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APPLICATIONS NOTES & DESIGN DATA

Applications Notes are available from your local Filtronic Sales Representative or directly from the

factory. Complete design data, including S-parameters, noise data, and large-signal models are

available on the Filtronic web site.

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RECOMMENDED BIASING GUIDELINES:

For most applications, a dual-bias circuit is required due to the amount of quiescent current drawn by

the FPD3000P100. The Source of the discrete pHEMT device is wire-bonded to the package flange,

and therefore self-biasing (using a bypassed Source resistor to set the Gate-Source voltage) is not

practical. A dual-bias circuit will require a regulated and filtered negative Gate supply as well as a

positive Drain supply. Typical Gate bias voltages will be about -0.4V. Active bias circuits can be

employed if the dissipation by a Drain current sense resistor is acceptable, and in these cases the bias

voltages must be sequenced so that the negative Gate voltage is established at its final value before

the Drain voltage is reached, to prevent device self-oscillation.

All information and specifications are subject to change without notice.