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FPD3000P100 Datasheet(PDF) 2 Page - Filtronic Compound Semiconductors

Part # FPD3000P100
Description  2W PACKAGED POWER PHEMT
PDF  3 Pages
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD3000P100 Datasheet(HTML) 2 Page - Filtronic Compound Semiconductors

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FPD3000P100
2W PACKAGED POWER PHEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Released: 6/27/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
•
RECOMMENDED BIAS CONDITIONS:
Drain-Source Voltage:
5V to 8V
Drain-Source Current:
33% to 50% IDSS
•
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
-3V < VGS < +0V
9
V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3
V
Drain-Source Current
IDS
For VDS > 2V
IDSS
mA
Gate Current
IG
Forward or reverse current
25
mA
RF Input Power2
PIN
Under any acceptable bias state
600
mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
-40
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
5.3
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits3
2 or more Max. Limits
80
%
1TAmbient = 22°C unless otherwise noted
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
•
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
•
Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
•
Absolute Maximum Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 5.3W – (0.042W/°C) x THS
where THS = heatsink or ambient temperature above 22°C
Example: For a 85
°C heatsink temperature: PTOT = 5.3W – (0.042 x (85 – 22)) = 2.65
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 0 (< 250V) per JESD22-A114-B, Human Body
Model, and Class A (< 200V) per JESD22-A115-A, Machine Model.



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