HMS5N70 datasheet(2/7 Pages) HMSEMI

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Electrical Characteristics T

J=25 C unless otherwise specified

Notes :

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS=0.9A VDD=50V, RG=25, Starting TJ =25C

3. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

4. Essentially Independent of Operating Temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

On Characteristics

VGS

Gate Threshold Voltage

VDS = VGS, ID = 140 μA

2.0

4.0

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V, ID = 1.2 A

0.955

1.1

Ω

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 1mA

700

IDSS

Zero Gate Voltage Drain Current

VDS = 700 V, VGS = 0

μA

VDS = 700 V, TC = 150℃

100

μA

IGSS

Gate-Body Leakage Current

VGS = ±20 V, VDS = 0 V

μA

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 400 V, VGS = 0 V,

f = 1.0 MHz

410

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

2.7

Switching Characteristics

td(on)

Turn-On Time

VDS = 350 V, ID = 1.8 A,

RG = 25 Ω

(Note 3,4)

Turn-On Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Qg(

Total Gate Charge

VDS = 560 V, ID = 1.8 A,

VGS = 10 V

(Note 3,4)

9.3

Qgs

Gate-Source Charge

1.8

Qgd

Gate-Drain Charge

3.0

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

5.0

ISM

Maximum Pulsed Drain-Source Diode Forward Current

15.0

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 1.8 A

1.3

trr

Reverse Recovery Time

VR = 400 V, IF = 1.8 A

diF/dt = 100 A/μs

210

Qrr

Reverse Recovery Charge

1.2

μC

HMS5N70

HMS5N70 Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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