HMS5N70 datasheet(3/7 Pages) HMSEMI

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0.1

100

1000

10000

100

200

300

400

500

600

700

VDS Drain-Source Voltage [V]

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID [A]

QG [nC]

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

1E+01

1E+02

0.2

0.4

0.6

0.8

1.2

1.4

VSD [V]

2.5

7.5

VDS, Drain-Source Voltage [V]

2.5

7.5

VGS, Gate-Source Voltage [V]

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

4.5V

5.5V

20V

10V

25℃

150℃

※ Notes

1. VDS = 20 V

2. 300us Pulse Test

25℃

150℃

※ Notes

1. VGS = 0 V

2. 300us Pulse Test

※ Notes

1. VGS = 10 V

2. TJ = 25 ℃

※ Notes

1. VGS = 0 V

2. f = 1 MHz

Ciss

Coss

Crss

※ Notes

1. ID = 1.8 A

VGS = 20V

VGS = 10V

140V

350V

560V

HMS

HMS5N70 Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HMS5N70 Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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