L6986HTR datasheet(7/68 Pages) STMICROELECTRONICS

7 / 68 page

Symbol

Parameter

Test conditions

Note

Min.

Typ.

Max.

Unit

IQ OPVIN

Quiescent current from

VIN

LCM -SWO

VREF< VFB< VOVP(SLEEP)

VBIAS = 3.3 V

(3)

µA

LCM -NO SWO

VREF< VFB<

VOVP(SLEEP) VBIAS =

GND

(3)

120

LNM -SWO

VFB= GND (NO SLEEP)

VBIAS = 3.3 V

0.5

1.5

LNM -NO SWO

VFB= GND (NO SLEEP)

VBIAS = GND

2.8

IQ OPVBIAS

Quiescent current from

VBIAS

LCM -SWO

VREF< VFB< VOVP(SLEEP)

VBIAS = 3.3 V

(3)

115

µA

LNM -SWO

VFB= GND (NO SLEEP)

VBIAS = 3.3 V

0.5

1.2

Soft-start

VINH

VSS threshold

SS rising

200

460

700

VINH HYST

VSS hysteresis

100

140

ISS CH

CSS charging current

VSS<VINH OR

t< TSS SETUP OR VEA+>VFB

(2)

µA

t> TSS SETUP AND VEA

+<VFB

(2)

VSS START

Start of internal error

amplifier ramp

0.995

1.1

1.150

SSGAIN

SS/INH to internal error

amplifier gain

Error amplifier

VOUT

Voltage feedback

3.3 V(L6986H3V3)

3.25

3.3

3.35

5 V(L6986H5V)

4.925

5.0

5.075

L6986H

0.841

0.85

0.859

IVOUT

VOUT biasing current

3.3 V(L6986H3V3)

8.5

µA

5 V(L6986H5V)

7.5

13.5

L6986H

500

Error amplifier gain

(2)

100

ICOMP

EA output current

capability

±6

±12

±25

µA

Inner current loop

gCS

Current sense

transconductance

(VCOMP to inductor

current gain)

Ipk = 1 A

(2)

2.5

A/V

L6986H

Electrical characteristics

DS12905 - Rev 2

page 7/68

L6986HTR Datasheet(PDF) 7 Page - STMicroelectronics

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