L6986HTR datasheet(8/68 Pages) STMICROELECTRONICS

8 / 68 page

Symbol

Parameter

Test conditions

Note

Min.

Typ.

Max.

Unit

VPP*gCS

Slope compensation

(4)

0.45

0.75

Overvoltage protection

VOVP

Overvoltage trip

(VOVP/VREF)

1.15

1.2

1.25

VOVP HYST

Overvoltage hysteresis

0.5

Synchronization (fanout: 6 slave devices typ.)

fSYNCH

Synchronization

frequency

LNM; FSW=VCC

275

1400 (2)

kHz

LNM; FSW=GND

475

2200 (2)

VSYN TH

SYNCH input threshold

LNM,SYNCH rising

0.70

1.2

ISYN

SYNCH pull-down

current

LNM, VSYN=1.2 V

0.7

VSYN OUT

High level output

LNM,5 mA sinking load

1.40

Low level output

LNM,0.7 mA sourcing load

0.6

Reset

VTHR

Selected RST threshold MLF pinstrapping before SS

See Table 7. LNM/ LCM selection

(L6986H3V3), Table 8. LNM/ LCM selection

(L6986H5V) and Table 9. LNM/ LCM selection

(L6986H)

VTHR HYST

RST hysteresis

(2)

VRST

RST open collector

output

VIN>VINH AND VFB< VTH4

mA sinking load

0.4

2 <VIN< VINH 4 mA sinking

load

0.8

Delay

VTHD

RST open collector

released as soon as

VDELAY > VTHD

VFB> VTHR

1.19

1.234

1.258

ID CH

CDELAY charging

current

VFB> VTHR

µA

Thermal shutdown

TSHDWN

Thermal shutdown

temperature

(2)

165

°C

THYS

Thermal shutdown

hysteresis

(2)

1. Parameter tested in static condition during testing phase. Parameter value may change over dynamic application conditions.

2. Not tested in production.

3. LCM enables SLEEP mode at light-load.

4. Measured at fsw=250 kHz

L6986H

Electrical characteristics

DS12905 - Rev 2

page 8/68

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