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BUF602IDBVT Datasheet(PDF) 3 Page - Texas Instruments |
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BUF602IDBVT Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 22 page ![]() www.ti.com ELECTRICAL CHARACTERISTICS: V S = ±5V BUF602 SBOS339 – OCTOBER 2005 Boldface limits are tested at +25 °C. At R L = 100Ω, unless otherwise noted. BUF602ID, IDBV TYP MIN/MAX OVER TEMPERATURE 0 °C to –40 °C to MIN/ PARAMETER CONDITIONS +25 °C +25 °C(2) 70 °C(3) +85 °C(3) UNITS MAX TEST LEVEL(1) AC PERFORMANCE (See figure 30) Bandwidth VO = 500mVPP 1000 560 550 540 MHz min B VO = 1VPP 920 MHz typ C Full Power Bandwidth VO = 5VPP 880 MHz typ C Bandwidth for 0.1dB Flatness VO = 500mVPP 240 MHz typ C Slew Rate VO = 5V Step 8000 7000 6000 5000 V/ µs min B Rise Time and Fall Time VO = 0.2V Step 350 625 640 650 ps max B Settling Time to 0.05% VO = 1V Step 6 ns typ C Harmonic Distortion VO = 2VPP, 5MHz 2nd-Harmonic RL = 100Ω –57 –44 –44 –42 dBc max B RL = 500Ω –76 –63 –62 –60 dBc max B 3rd-Harmonic RL = 100Ω –68 –63 –63 –63 dBc max B RL = 500Ω –98 –85 –84 –82 dBc max B Input Voltage Noise f > 100kHz 4.8 5.1 5.6 6.0 nV/ √Hz max B Input Current Noise f > 100kHz 2.1 2.6 2.7 2.8 pA/ √Hz max B Differential Gain NTSC, RL = 150Ω to 0V 0.15 % typ C Differential Phase NTSC, RL = 150Ω to 0V 0.04 ° typ C BUFFER DC PERFORMANCE(4) Maximum Gain RL = 500Ω 0.99 1 1 1 V/V max A Minimum Gain RL = 500Ω 0.99 0.98 0.98 0.98 V/V min A Input Offset Voltage ±16 ±30 ±36 ±38 mV max A Average Input Offset Voltage Drift ±125 ±125 µV/°C max B Input Bias Current ±3 ±7 ±8 ±8.5 µA max A Average Input Bias Current Drift ±20 ±20 nA/ °C max B BUFFER INPUT Input Impedance 1.0 || 2.1 M Ω || pF typ C BUFFER OUTPUT Output Voltage Swing RL = 100Ω ±3.8 ±3.7 ±3.7 ±3.7 V min B RL = 500Ω ±4.0 ±3.8 ±3.8 ±3.8 V min A Output Current (Continuous) VO = 0V ±60 ±50 ±49 ±48 mA min A Peak Output Current VO = 0V ±350 mA typ C Closed-Loop Output Impedance f ≤ 10MHz 1.4 Ω typ C POWER SUPPLY Specified Operating Voltage ±5 V typ C Maximum Operating Voltage ±6.3 ±6.3 ±6.3 V max A Minimum Operating Voltage ±1.4 ±1.4 ±1.4 V min B Maximum Quiescent Current VS = ±5V 5.8 6.3 6.9 7.2 mA max A Minimum Quiescent Current VS = ±5V 5.8 5.3 4.9 4.3 mA min A Power-Supply Rejection Ratio (+PSRR) 54 48 46 45 dB min A (1) Test levels: (A) 100% tested at 25 °C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. ©) Typical value only for information. (2) Junction temperature = ambient for 25 °C specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 8 °C at high temperature limit for over temperature specifications. (4) Current is considered positive out of node. 3 |
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