F159V datasheet(1/78 Pages) RENESAS

Part #	F159V

Description	Dual-Path RF Transmitter IC 450MHz to 2800MHz

PDF	78 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Dual-Path RF Transmitter IC

450MHz to 2800MHz

F159V

Datasheet

1

May 15, 2020

Description

The F159V is a Dual-Path RF Transmitter IC that has an operating

frequency range of 450MHz to 2800MHz. The device provides two

independent transmit paths each with 18.3dB typical maximum

gain with corresponding output noise floor of -142.5dBm/Hz,

+31dBm OIP3, and +14dBm output P1dB designed to operate with

a single +3.3V supply while consuming only 685mA DC current.

Each signal path includes a quadrature modulator, voltage variable

attenuator (VVA), digital step attenuator (DSA), and a fixed gain

amplifier. The device supports a total of 32dB VVA adjustment

range using a SPI-controlled 11-bit DAC, and each DSA has 31dB

gain control range in 1dB steps using SPI control.

An on-chip frequency synthesizer is shared by both paths and is

optimized for use in multi-carrier, multi-mode FDD and TDD base

station transmitters achieving GSM-grade performance. The

synthesizer offers both an integer mode and fractional mode. It

requires an external loop filter and an external reference oscillator

in the frequency range of 10MHz to 250MHz.

The F159V is packaged in a 10mm x 10mm, 68-pin QFN with 110Ω

differential drive from external I/Q DACs and single-ended 50Ω RF

output impedance for ease of integration into the signal-path lineup

for each of the two transmitter paths. Each path has independent

power supply control thereby allowing optimum power efficiency.

Competitive Advantage



High level of integration includes frequency synthesizer / PLL,

dual-path DSA, Modulator, and VVA



High reliability



Low DC current



Zero DistortionTM

technology



GlitchFreeTM

technology

Typical Applications



Application Multi-mode, Multi-carrier Transmitters



PCS1900 Base Stations



DCS1800 Base Stations



WiMAX and LTE Base Stations



UMTS/WCDMA 3G Base Stations



PHS/PAS Base Stations



Distributed Antenna Systems



Digital Radio

Features



Independent dual-path operation



RF output frequency: 450MHz to 2800MHz



18.3dB typical maximum gain (no attenuation)



+31dBm OIP3 (no attenuation)



+14dBm Output P1dB (no attenuation)



13dB NF corresponds to -142.5dBm/Hz output noise floor (no

attenuation)



Output noise floor -152.3dBm/Hz (VVA=14dB, DSA=1dB)



Channel Isolation: 47dB



DSA with 31dB total gain range in 1dB steps



Multiple VVAs with 32dB gain range controlled by on-chip SPI

controlled 11-bit DAC



Variable Gain amplifier (VGA) is comprised of DSAs, VVAs,

and a fixed-gain amplifier



I lead Q by 90 degrees for high side LO injection



Supports ZIF or CIF architectures



Common-mode voltage range: +0.1V to +0.8V



Integer-N and Fractional-N Synthesizer



Direct 110Ω differential driven from I/Q DAC



50Ω single-ended RF output impedance



Internal or external LO select



+3.3V supply voltage at 685mA (LO_Out not turned on)



Specified Case Temperature; -20°C to +115°C



10mm x 10mm, 68-pin QFN package

Block Diagram

Figure 1. Block Diagram

RFOUT

Channel 0

RFOUT

Channel 1

Amplifier

Enable

MOD

Enable

I-

LO_IN

LO_OUT

RESET

Vdd

REF_IN

CP_OUT

VTUNE

VCOM

LO_LD

LO

Switch

Matrix

90 / 0

/2

∑

/M

Frequency

Synthesizer

SPI Controller

90 / 0

∑

DAC

Channel 1

I+

Q-

Q+

-

+

-

+

Amplifier

Enable

MOD

Enable

I-

Channel 0

I+

Q-

Q+

MOD

Couple

MOD

Couple

Glitch-FreeTM

Zero-DistortionTM

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