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F0453CEVB Datasheet(PDF) 12 Page - Renesas Technology Corp |
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F0453CEVB Datasheet(HTML) 12 Page - Renesas Technology Corp |
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12 / 30 page ![]() F0453C Datasheet © 2020 Renesas Electronics Corporation 12 May 1, 2020 Electrical Characteristics: 3400MHz–3600MHz [1] Table 7. Electrical Characteristics: RX Path in Rx Mode Cascaded Performance See the F0453C Application Circuit. Specifications apply when operated as an Rx RF amplifier with VDD = +3.3V, fRF = 3500MHz, TEPAD = +25°C, STBY = LOW, RX output power = -10dBm, ZS = ZL = 50Ω, and EVKit trace and connector losses are de-embedded unless otherwise noted. Parameter Symbol Condition Minimum Typical Maximum Units Input Return Loss RLIN Measured at SW1_IN, SW2_IN High Gain Mode, fRF = 3400MHz to 3600MHz 13 [a] dB Measured at SW1_IN, SW2_IN Low Gain Mode, fRF = 3400MHz to 3600MHz 12 Measured at SW1_IN, SW2_IN TX mode [b] [c] 12 Output Return Loss RLOUT Measured at RX1_OUT, RX2_OUT, High/Low Gain Modes, fRF = 3400MHz to 3600MHz 6 dB Reverse Isolation, RX1_OUT to SW1_IN, or RX2_OUT to SW2_IN ISOREV fRF = 3400MHz to 3600MHz 54 64 dB Gain GHG High Gain Mode 32 35 37 dB GHG_TEMP TEPAD = -40 to 105°C 31 38 Gain Attenuated GLG Low Gain Mode 25.5 29 31.5 dB Gain Ripple GRIPPLE fRF = 3400MHz to 3600MHz (Difference between maximum and minimum gain in each 100MHz subrange within the specified frequency range) ±0.2 dB Noise Figure NF Measured at antenna port ideally matched to LNA 1.35 1.55 dB TEPAD = 105°C 2.1 Low Gain Mode 1.35 [a] Items in Minimum/Maximum columns in bold italics are guaranteed by test. Items in Minimum/Maximum columns NOT in bold italics are guaranteed by design characterization. [b] Specification reflects use of an external termination resistor at SW1_OUT, SW2_OUT with a RL > 22dB. [c] Performance can be further improved with tuning at the SW1_OUT and SW2_OUT ports. |
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