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STP80NF12 Datasheet(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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STP80NF12 Datasheet(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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4 / 4 page ![]() -50 0 50 100 150 120 125 130 135 140 145 T j, Junction Temperature (℃ ) I D = 250 μA V GS = 0 V -50 0 50 100 150 0.0 2.0m 4.0m 6.0m 8.0m 10.0m I D = 30 A V GS = 10 V T j, Junction Temperature (℃ ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance 0.4 0.5 0.6 0.7 0.8 0.9 1 10 100 T j = 25 ℃ V SD, Source-Drain voltage (V) 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 T C, Case Temperature (℃ ) Figure 7, Forward characteristic of body diode Figure 8, Drain current 0.1 1 10 100 1000 0.1 1 10 100 1000 V DS, Drain-source voltage(V) 10 μs DC 10 ms 1 ms 100 μs R DS(ON) Limited STP80NF12 Figure 9, Safe operation area TC=25 ℃ www.doingter.cn — 4 — 0086-0755-8278-9056 |
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