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STP80NF12 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # STP80NF12
Description  N-Channel MOSFET uses advanced SGT technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STP80NF12 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  STP80NF12 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STP80NF12 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STP80NF12 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STP80NF12 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Electrical Characteristics：(T
J=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
120
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=120V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=30A
---
5.0
6.5
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=50V, VGS=0V, f=100 KHz
---
5000
---
pF
Coss
Output Capacitance
---
650
---
Crss
Reverse Transfer Capacitance
---
17
---
Switching Characteristics
td(on)
Turn-On Delay Time
VGS=10V ,VDS=50V, ID=25A,
RG=2Ω.
---
30
---
ns
tr
Rise Time
---
32
---
ns
td(off)
Turn-Off Delay Time
---
54.5
---
ns
tf
Fall Time
---
11
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=50V,
ID=25A
---
65
---
nC
Qgs
Gate-Source Charge
---
16
---
nC
Qgd
Gate-Drain “Miller” Charge
---
13.5
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=30A
---
---
1.3
V
Is
Diode Forward Current
VGS<Vth
---
---
110
A
ISP
---
---
330
Pulsed source current
m
STP80NF12



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