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STP80NF12 Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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STP80NF12 Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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1 / 4 page ![]() www.doingter.cn — 1 — Description: This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=120V,ID=110A,RDS(ON)<6.5 Ω @VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(T J=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 120 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 1 TC=25℃ 110 A EAS Single Pulse Avalanche Energy 5 400 mJ PD Power Dissipation 192 W TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 ℃ Thermal Characteristics: Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.65 ℃/W RƟJA Thermal Resistance,Junction to Ambient 4 62 D S G m STP80NF12 |
Similar Part No. - STP80NF12 |
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Similar Description - STP80NF12 |
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