ADRF5019BCPZN-R7 datasheet(4/12 Pages) AD

4 / 12 page

ADRF5019

Data Sheet

Rev. 0 | Page 4 of 12

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

DIGITAL CONTROL INPUTS

VCTRL pin and LS pin

Voltage

Low

VINL

0.8

High

VINH

3.3

Current

Low and High Current

IINL, IINH

µA

RECOMMENDED OPERATING CONDITONS

Supply Voltage

Positive

VDD

3.0

3.6

Negative

VSS

−2.75

−2.25

Digital Control Input Voltage

VCTL

VDD

RF Input Power, Dual Supply2

VDD = 3.3 V, VSS = −2.5 V, f = 2 GHz, TCASE = 85°C3

Insertion Loss Path

RF signal is applied to RFC or through

connected RF1 or RF2

dBm

Isolation Path

RF signal is applied to the terminated RF1 or RF2

dBm

Hot Switching

RF signal is present at RFC while switching

between RF1 and RF2

dBm

RF Input Power, Single Supply2

VDD = 3.3 V, VSS = 0 V, f = 2 GHz, TCASE = 85°C3

Insertion Loss Path

RF signal is applied to RFC or through

connected RF1 or RF2

dBm

Isolation Path

RF signal is applied to the terminated RF1 or RF2

dBm

Hot Switching

RF signal is present at RFC while switching

between RF1 and RF2

dBm

Case Temperature

TCASE

−40

+105

°C

For input linearity performance vs. frequency, see Figure 13 to Figure 20.

For power derating vs. frequency, see Figure 2 and Figure 3. Power derating is applicable for insertion loss path, terminated path, and hot switching power

specifications.

For operation at 105°C, the power handling degrades from the TCASE = 85°C specification by 3 dB.

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