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STM32H723VG Datasheet(PDF) 176 Page - STMicroelectronics

Part # STM32H723VG
Description  32-bit Arm® Cortex®-M7 550 MHz MCU, up to 1 MB Flash memory, 564 KB RAM, 35 comms peripherals and analog interfaces
PDF  227 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H723VG Datasheet(HTML) 176 Page - STMicroelectronics

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Electrical characteristics
STM32H723xE/G
176/227
DS13313 Rev 2
6.3.26
Digital temperature sensor characteristics
6.3.27
Temperature and VBAT monitoring
Table 90. Digital temperature sensor characteristics(1)
1. Guaranteed by design, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fDTS(2)
2. Guaranteed by characterization results.
Output Clock frequency
-
500
750
1150
kHz
TLC(2)
Temperature linearity coefficient
VOS2
1660
2100
2750
Hz/°
C
TTOTAL_ERROR
(2)
Temperature offset
measurement, all VOS
TJ = −40°C to
30°C
−13
-
4
°C
TJ = 30°C to
Tjmax
−7-
2
TVDD_CORE
Additional error due to supply
variation
VOS2
0
-
0
°C
VOS0, VOS1,
VOS3
−1-
1
tTRIM
Calibration time
-
-
-
2
ms
tWAKE_UP
Wake-up time from off state until
DTS ready bit is set
-
-
67
116.00
μs
IDDCORE_DTS
DTS consumption on
VDD_CORE
-
8.5
30
70.0
μA
Table 91. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-26
-
KΩ
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
1. Guaranteed by design.
Error on Q
–10
-
+10
%
tS_vbat(1)
ADC sampling time when reading VBAT input
9
-
-
µs
VBAThigh
High supply monitoring
-
3.55
-
V
VBATlow
Low supply monitoring
-
1.36
-
Table 92. VBAT charging characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
RBC
Battery charging resistor
VBRS in PWR_CR3= 0
-
5
-
KΩ
VBRS in PWR_CR3= 1
1.5
-



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