STM32WB55 datasheet(112/193 Pages) STMICROELECTRONICS

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Table 47. Current consumption in Shutdown mode

Symbol

Parameter

Conditions

TYP

MAX(1)

1. Guaranteed by characterization results, unless otherwise specified.

Unit

-VDD

0 °C

25 °C 40 °C 55 °C 85 °C 105 °C

0 °C

25 °C 85 °C 105 °C

IDD

(Shutdown)

Supply current in

Shutdown mode

(backup

registers

retained) RTC

disabled

1.8 V

0.039

0.013 0.030 0.100 0.635

1.950

2.099

6.200

µA

2.4 V

0.059

0.014 0.055 0.120 0.785

2.350

3.0 V

0.064

0.037 0.070 0.180 1.000

2.900

0.185 2.670

7.490

3.6 V

0.071

0.093 0.140 0.280 1.300

3.700

0.247 3.120

8.450

IDD

(Shutdown

with RTC)

Supply current in

Shutdown mode

(backup

registers

retained) RTC

enabled

RTC clocked

by LSE



quartz (2) in low

drive mode

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

1.8 V

0.320

0.315 0.355 0.420 0.985

2.300

0.572 2.702

6.180

2.4 V

0.425

0.405 0.460 0.540 1.200

2.800

3.0 V

0.535

0.535 0.595 0.700 1.500

3.450

0.664 2.990

7.800

3.6 V

0.695

0.720 0.790 0.940 2.000

4.350

0.790 3.730

9.140

Table 48. Current consumption in VBAT mode

Symbol

Parameter

Conditions

TYP

MAX(1)

1. Guaranteed by characterization results, unless otherwise specified.

Unit

-VBAT 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C

IDD(VBAT)

Backup

domain

supply

current

RTC disabled

1.8 V 1.00 2.00

4.00

10.0

52.0

145

2.4 V 1.00 2.00

5.00

12.0

60.0

165

3.0 V 2.00 4.00

7.00

16.0

75.0

225

3.6 V 7.00 15.0

23.0

42.0

170

450

RTC enabled

and clocked

by LSE

quartz(2)

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

1.8 V 295

305

315

325

380

480

2.4 V 385

395

400

415

475

595

3.0 V 495

505

515

530

600

765

3.6 V 630

645

660

685

830

1150

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