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STM32WB55 Datasheet(PDF) 138 Page - STMicroelectronics |
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STM32WB55 Datasheet(HTML) 138 Page - STMicroelectronics |
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138 / 193 page ![]() Electrical characteristics STM32WB55xx STM32WB35xx 138/193 DS11929 Rev 11 Figure 28. Recommended NRST pin protection 1. The reset network protects the device against parasitic resets. 2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in Table 75, otherwise the reset will not be taken into account by the device. 3. The external capacitor on NRST must be placed as close as possible to the device. Table 75. NRST pin characteristics(1) 1. Guaranteed by design. Symbol Parameter Conditions Min Typ Max Unit VIL(NRST) NRST input low level voltage - - - 0.3 x VDD V VIH(NRST) NRST input high level voltage - 0.7 x VDD -- Vhys(NRST) NRST Schmitt trigger voltage hysteresis -- 200 - mV RPU Weak pull-up equivalent resistor(2) 2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance is minimal (~10%) . VIN = VSS 25 40 55 kΩ VF(NRST) NRST input filtered pulse -- - 70 ns VNF(NRST) NRST input not filtered pulse 1.71 V ≤ VDD ≤ 3.6 V 350 - - MS19878V3 RPU VDD Internal reset External reset circuit (1) NRST (2) Filter 0.1 μF |
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