AM4407 datasheet(3/8 Pages) AITSEMI

3 / 8 page

AiT Semiconductor Inc.

www.ait-ic.com

AM4407

MOSFET

-30V P-CHANNEL ENHANCEMENT MODE

REV1.0

- SEP 2010 RELEASED –

- 3 -

ABSOLUTE MAXIMUM RATINGS

TA = 25°C Unless otherwise specified

VDSS, Drain-Source Voltage

30V

VGSS, Gate-Source Voltage

±20V

ID, Continuous Drain Current, VGS=10VNOTE1

TA=25°C

12A

IDM, Pulsed Drain CurrentNOTE2

30A

PD, Power Dissipation

TA=25°C

3.2W

TA=70°C

TJ, Operation Junction Temperature

-55/150°C

TSTG, Storage Temperature Range

-55/150°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C.

NOTE2: The data tested by pulsed , pulse width≦300us , duty cycle≦2%

AM4407 Datasheet(PDF) 3 Page - AiT Semiconductor Inc.