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2N2222AS-AL Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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2N2222AS-AL Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 6 page ![]() COLLECTOR 3 1 BASE 2 EMITTER SEMICONDUCTOR TECHNICAL DATA 2N2222AS-AL 2022. 04. 21 1/6 Revision No : 0 SOT-23 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25ºC) 4. THERMAL CHARACTERISTICS Total Device Dissipation, FR −5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. −55~+150 TJ,Tstg ºC 1.8 556 Emitter–Base Voltage VEBO 6 V Collector Current — Continuous IC 600 mA PD R θJA mW mW/ºC ºC/W Collector–Emitter Voltage VCEO 40 V Collector–Base Voltage VCBO 75 V 225 Parameter Symbol Limits Unit Parameter Symbol Limits General Purpose Transistors NPN Silicon Device Marking Shipping 2N2222AS-AL 1P 3000/Tape&Reel Unit Junction–to–Case 300 R θJC ºC/W |
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