RHRPM4424 datasheet(8/31 Pages) STMICROELECTRONICS

Part #	RHRPM4424

Description	Rad-hard 4.5 A dual low-side MOSFET driver

PDF	31 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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8 / 31 page

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISOURCE

Source peak current (1)

VCC = 10 V

Inputs at high level

COUT to GND = 10 nF

5.5

ISINK

Sink peak current (1)

VCC = 10 V

Inputs at low level

COUT to GND = 10 nF

4.5

VOH

High level output voltage, VCC-

VOUT

Inputs at high level

OUTH_1 ≡ OUTL_1

OUTH_2 ≡ OUTL_2

IOUT = 1 mA

VOL

Low level output voltage, VOUT

Inputs at low level

OUTH_1 ≡ OUTL_1

OUTH_2 ≡ OUTL_2

IOUT = 1 mA

Output rise time

VCC = 10 V

OUTH_1 ≡ OUTL_1

OUTH_2 ≡ OUTL_2

COUT to GND = 10 nF

Output fall time

VCC = 10 V

OUTH_1 ≡ OUTL_1

OUTH_2 ≡ OUTL_2

COUT to GND = 10 nF

Propagation delay

Input- to-output delay time

VCC = 10 V

OUTH_1 ≡ OUTL_1

OUTH_2 ≡ OUTL_2

COUT to GND = 10 nF

110

Matching between propagation

delays (1)

-5

1. Parameter guaranteed at design level and characterized, not tested in production.

RHRPM4424

Electrical characteristics

DS11485 - Rev 7

page 8/31

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