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SH32N65DM6AG Datasheet(PDF) 6 Page - STMicroelectronics |
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SH32N65DM6AG Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Figure 7. Typical capacitance characteristics GADG210420210934CVR 10 4 10 3 10 2 10 1 10 0 10 -1 10 -1 10 0 10 1 10 2 C (pF) VDS (V) Ciss Coss Crss f = 1 MHz Figure 8. Normalized gate threshold vs temperature GADG020820221214VTH 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) TJ (°C) ID = 250 μA Figure 9. Normalized on-resistance vs temperature GADG020820221214RON 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 RDS(on) (norm.) TJ (°C) VGS= 10 V Figure 10. Normalized breakdown voltage vs temperature GADG020820221214BDV 1.10 1.05 1.00 0.95 0.90 -75 -25 25 75 125 V(BR)DSS (norm.) TJ (°C) ID = 1 mA Figure 11. Typical reverse diode forward characteristics GADG020820221215SDF 1.2 1.0 0.8 0.6 0.4 0 5 10 15 20 25 30 35 VSD (V) ISD (A) TJ= -40 °C TJ= 25 °C TJ= 150 °C SH32N65DM6AG Electrical characteristics (curves) DS14049 - Rev 2 page 6/14 |
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