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SH32N65DM6AG Datasheet(PDF) 4 Page - STMicroelectronics

Part # SH32N65DM6AG
Description  Automotive-grade N-channel 650 V, 89 m typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SH32N65DM6AG Datasheet(HTML) 4 Page - STMicroelectronics

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Table 7. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(v)
Voltage delay time
VDD = 400 V, VGS = 0 to 10 V, ID = 37 A,
RG = 6.8 Ω (see Figure 14. Test
circuit for inductive load switching
and diode recovery times and
Figure 18. Turn-off switching time
waveform on inductive load)
-
54
-
ns
tr(v)
Voltage rise time
-
7
-
ns
tf(i)
Current fall time
-
8
-
ns
tc(off)
Crossing time off
-
13
-
ns
td(i)
Current delay time
VDD = 400 V, VGS = 0 to 10 V, ID = 37 A,
RG = 82 Ω (see Figure 14. Test
circuit for inductive load switching
and diode recovery times and
Figure 19. Turn-on switching time
waveform on inductive load)
-
154
-
ns
tr(i)
Current rise time
-
59
-
ns
tf(v)
Voltage fall time
-
9
-
ns
tc(on)
Crossing time on
-
128
-
ns
Table 8. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
32
A
ISDM(1)
Source-drain current (pulsed)
-
120
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 32 A
-
1.6
V
trr
Reverse recovery time
ISD = 37 A, di/dt = 100 A/μs, VDD = 60 V
(see Figure 14. Test circuit for inductive
load switching and diode recovery times)
-
125
ns
Qrr
Reverse recovery charge
-
0.52
µC
IRRM
Reverse recovery current
-
7.5
A
trr
Reverse recovery time
ISD = 37 A, di/dt = 100 A/μs,
VDD = 60 V, TJ = 150 °C
(see Figure 14. Test circuit for inductive
load switching and diode recovery times)
-
260
ns
Qrr
Reverse recovery charge
-
2.5
µC
IRRM
Reverse recovery current
-
17
A
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
SH32N65DM6AG
Electrical characteristics
DS14049 - Rev 2
page 4/14



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