STB47N50DM6AG datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STB47N50DM6AG

Description	Automotive-grade N-channel 500 V, 61 m typ., 38 A MDmesh™ DM6 Power MOSFET in a D²PAK package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1

3

TAB

D²PAK

2

D(2, TAB)

G(1)

S(3)

AM01475V1

Features

Order code

VDS

RDS(on) max.

ID

STB47N50DM6AG

500 V

71 mΩ

38 A

•

AEC-Q101 qualified

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STB47N50DM6AG

Product summary

Order code

STB47N50DM6AG

Marking

47N50DM6

Package

D2PAK

Packing

Tape and reel

Automotive-grade N-channel 500 V, 61 mΩ typ., 38 A MDmesh™ DM6

Power MOSFET in a D²PAK package

STB47N50DM6AG

Datasheet

DS12118 - Rev 4 - May 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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STB47N50DM6AG Datasheet(PDF) 1 Page - STMicroelectronics

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