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STS8DN6LF6AG Datasheet(PDF) 6 Page - STMicroelectronics |
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STS8DN6LF6AG Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Figure 7. Capacitance variations GADG011220160832CVR 10 3 10 2 10 1 0 10 20 30 40 50 60 C (pF) VDS (V) CISS COSS CRSS Figure 8. Normalized gate threshold voltage vs temperature GADG301120161608VTH 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -75 -25 25 75 125 175 VGS(th) (norm.) TJ (°C) ID = 250 µA Figure 9. Normalized on-resistance vs temperature GADG301120161603RON 2.5 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 175 RDS(on) (norm.) TJ (°C) VGS = 10 V Figure 10. Normalized V(BR)DSS vs temperature GADG301120161611BDV 1.12 1.08 1.04 1.00 0.96 0.92 0.88 -75 -25 25 75 125 175 V(BR)DSS (norm.) TJ (°C) ID = 250 µA Figure 11. Source-drain diode forward characteristics GADG301120161614SDF 1.0 0.9 0.8 0.7 0.6 0.5 0.4 2 3 4 5 6 7 VSD (V) ISD (A) TJ = -55 °C TJ = 25 °C TJ = 175 °C STS8DN6LF6AG Electrical characteristics (curves) DS11953 - Rev 2 page 6/14 |
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