AR2003FV

7 of 15

December 2014

Document number: DS37473 Rev. 3 - 2

www.diodes.com

© Diodes Incorporated

AR2003FV

Electrical Characteristics (@TA = +25°C, unless otherwise specified.) (Cont.)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Over Voltage Protection

VOVP0H

Output Over Voltage High Threshold when

OVS = 0

–

–

6

–

V

VOVP0L

Output Over Voltage Low Threshold when

OVS = 0

–

–

5.4

–

V

Synchronization

VTHSYNC

SYNC Falling Threshold

Gate Output from High to Low

VAVDD-2.4

VAVDD-2.0

VAVDD-1.6

V

TSDLY

SYNC Propagation Delay (Note 8)

SYNC falling to Gate Falling

10%, 4.5V < VCC < 5.5V

–

40

70

ns

RSYNC

SYNC Pull Up Resistance (Note 8)

Internal Resistance from SYNC

to VCC, 4.5V < VCC < 5.5V

1.6

2.0

2.4

K

Ω

Gate Driver

RGUP

Gate Pull up Resistance Enabled

Igate=-100mA

–

2.3

4

Ω

RGDN

Gate Pull Down Resistance Enabled

Igate=100mA

–

1.1

2

VOHG

Gate Output High Voltage

Igate=-100mA, VCC=5V

4.7

--

–

V

Igate=100mA, VCC>10V

9.5

--

–

VOLG

Gate Output Low Voltage

Igate=100mA, VCC=0V

–

--

0.3

Tfgate

Gate Fall Time

4V to 1V, Cgate = 3300pf

–

14

30

ns

10V to 1V, Cgate=3300pf

–

20

35

Trgate

Gate Rise Time

1V to 4V, Cgate = 3300pf

–

16

35

1V to 10V, Cgate = 3300pf

–

25

40

TDIS

Disable Delay (note 8)

EN falling to Gate falling

–

160

200

Exception Handling

Tover

Over Temperature

–

–

+150

–

°C

Trecover

Temperature to Recover from Over

Temperature Exception

–

–

+125

–

°C

Tdgate

Delay of Turn On Pull Down MOSFET

Cdgate=400pf

–

1.5

–

uS

Note 8: Guaranteed by design.