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STP22N60M6 Datasheet(PDF) 6 Page - STMicroelectronics |
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STP22N60M6 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 13 page ![]() Figure 7. Capacitance variations GIPG061120181052CVR 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 8. Output capacitance stored energy GADG061120181125EOS 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) Figure 9. Normalized gate threshold voltage vs temperature GADG190720181456VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) Tj (°C) ID = 250 µA Figure 10. Normalized on-resistance vs temperature GADG190720181456RON 2.2 1.8 1.4 1 0.6 0.2 -75 -25 25 75 125 RDS(on) (norm.) Tj (°C) VGS = 10 V Figure 11. Normalized V(BR)DSS vs temperature GADG190720181457BDV 1.08 1.04 1.00 0.96 0.92 0.88 -75 -25 25 75 125 V(BR)DSS (norm.) Tj (°C) ID = 1 mA Figure 12. Source-drain diode forward characteristics GIPG061120181205SDF 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 2 4 6 8 10 12 14 VSD (V) ISD (A) Tj = -50 °C Tj = 25 °C Tj = 150 °C STP22N60M6 Electrical characteristics (curves) DS12818 - Rev 1 page 6/13 |
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