STP22N60M6 datasheet(3/13 Pages) STMICROELECTRONICS

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Electrical characteristics

(Tcase = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C(1)

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.75

RDS(on)

Static drain-source on-resistance

ID = 7.5 A, VGS = 10 V

196

230

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

800

Coss

Output capacitance

52.6

Crss

Reverse transfer capacitance

4.3

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 V

181

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

4.7

Total gate charge

VDD = 480 V, ID = 15 A,

VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

Qgs

Gate-source charge

5.6

Qgd

Gate-drain charge

9.5

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 7.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time

waveform)

13.6

Rise time

6.3

td(off)

Turn-off delay time

Fall time

8.7

STP22N60M6

Electrical characteristics

DS12818 - Rev 1

page 3/13

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