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STP46N60M6 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STP46N60M6
Description  N-channel 600 V, 68 m typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220 package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP46N60M6 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical capacitance characteristics
GADG280120191024CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 8. Normalized gate threshold vs temperature
GADG191220180856VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID = 250 µA
Figure 9. Normalized on-resistance vs temperature
GADG191220180856RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
Tj (°C)
VGS = 10 V
Figure 10. Normalized breakdown voltage vs temperature
GADG191220180856BDV
1.10
1.05
1.00
0.95
0.90
0.85
-75
-25
25
75
125
V(BR)DSS
(norm.)
Tj (°C)
ID = 1 mA
Figure 11. Typical output capacitance stored energy
GIPD280120191305EOS
18
15
12
9
6
3
0
0
100 200 300 400 500 600
EOSS
(µJ)
VDS (V)
Figure 12. Typical reverse diode forward characteristics
GADG280120191023SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
6
12
18
24
30
36
VSD
(V)
ISD (A)
Tj = -50 °C
Tj = 25 °C
Tj = 150 °C
STP46N60M6
Electrical characteristics (curves)
DS12394 - Rev 3
page 6/13



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