STL28N60M2 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STL28N60M2

Description	N-channel 600 V, 0.140 typ., 19 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

STL28N60M2

Electrical characteristics

DocID030983 Rev 1

5/15

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current

(pulsed)

VSD (2)

Forward on voltage

ISD = 19 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 22 A, di/dt = 100 A/µs

VDD = 60 V

(see Figure 16: " Test circuit for

inductive load switching and

diode recovery times")

350

Qrr

Reverse recovery charge

4.7

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 22 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 16: " Test circuit for

inductive load switching and

diode recovery times")

451

Qrr

Reverse recovery charge

6.5

µC

IRRM

Reverse recovery current

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

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