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STL28N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL28N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() September 2017 DocID030983 Rev 1 1/15 This is information on a product in full production. www.st.com STL28N60M2 N- channel 600 V, 0.140 Ω typ., 19 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on)max ID STL28N60M2 650 V 0.165 Ω 19 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STL28N60M2 28N60M2 PowerFLAT™ 8x8 HV Tape and reel 5 1 2 3 4 PowerFLA T™ 8x8 HV |
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