STL28N60M2 datasheet(3/15 Pages) STMICROELECTRONICS

Part #	STL28N60M2

Description	N-channel 600 V, 0.140 typ., 19 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STL28N60M2

Electrical ratings

DocID030983 Rev 1

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

ID (1)

Drain current (continuous) at TC = 25 °C

ID (1)

Drain current (continuous) at TC = 100 °C

IDM (2)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

140

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

3.6

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

350

dv/dt (3)

Peak diode recovery voltage slope

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

°C

Notes:

(1)The value is limited by package.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 19 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V.

(4)VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.89

°C/W

Rthj-amb (1)

Thermal resistance junction-ambient

°C/W

Notes:

(1)When mounted on FR-4 board of inch², 2oz Cu.

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