STN6N60M2 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	STN6N60M2

Description	N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 13 page

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

GADG150220191054SOA

10 0

10 -1

10 -2

10 -1

10 0

10 1

10 2

(A)

VDS (V)

tp =1 µs

tp =10 µs

tp =100 µs

tp =1 ms

single pulse

TJ≤150 °C

TC=25 °C

VGS=10 V

Operation in this area

is limited by R DS(on)

Figure 2. Thermal impedance

Figure 3. Output characteristics

GADG150220191052OCH

10 12 14 16

(A)

VDS (V)

VGS =4 V

VGS =5 V

VGS =7, 8, 9, 10 V

VGS =6 V

Figure 4. Transfer characteristics

GADG150220191053TCH

(A)

VGS (V)

VDS = 17 V

Figure 5. Normalized VBR(DSS) vs temperature

GADG140220191314BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

ID = 1 mA

TJ (°C)

Figure 6. Static drain-source on-resistance

GADG140220191313RID

1.08

1.04

1.00

0.96

0.92

RDS(on)

(Ω)

ID (A)

VGS =10 V

STN6N60M2

Electrical characteristics (curves)

DS12926 - Rev 2

page 5/13

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