STN6N60M2 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STN6N60M2

Description	N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD (1)

Source-drain current

5.5

ISDM (2)

Source-drain current (pulsed)

VSD (3)

Forward on voltage

ISD = 4 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V,

(see Figure 16. Test circuit for inductive

load switching and diode recovery times)

229

Qrr

Reverse recovery charge

721

IRRM

Reverse recovery current

6.3

trr

Reverse recovery time

ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 16. Test circuit

for inductive load switching and diode

recovery times)

288

Qrr

Reverse recovery charge

936

IRRM

Reverse recovery current

6.5

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

STN6N60M2

Electrical characteristics

DS12926 - Rev 2

page 4/13

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