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STN6N60M2 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STN6N60M2
Description  N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN6N60M2 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Gate charge vs gate-source voltage
GADG150220191053QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
VDS
(V)
VGS
(V)
Qg (nC)
VDD = 480 V
ID = 4 A
VDS
Figure 8. Capacitance variations
GADG150220191052CVR
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 9. Normalized gate threshold voltage vs
temperature
GADG140220191313VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
TJ (°C)
ID = 250 μA
Figure 10. Normalized on-resistance vs temperature
GADG140220191313RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
VGS = 10 V
TJ (°C)
Figure 11. Source-drain diode forward characteristics
GADG140220191314SDF
1.0
0.9
0.8
0.7
0.6
0.5
0
1
2
3
4
VSD
(V)
ISD (A)
Tj = -50 °C
Tj = 25 °C
Tj = 150 °C
Figure 12. Output capacitance stored energy
GADG150220191216EOS
1.6
1.2
0.8
0.4
0
0
100 200 300 400 500 600
EOSS
(μJ)
VDS (V)
STN6N60M2
Electrical characteristics (curves)
DS12926 - Rev 2
page 6/13



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