STB30N80K5 datasheet(1/16 Pages) STMICROELECTRONICS

Part #	STB30N80K5

Description	N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a D²PAK package

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 16 page

July 2016

DocID028737 Rev 2

1/16

This is information on a product in full production.

www.st.com

STB30N80K5

N-

channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5

Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STB30N80K5

800 V

0.18 Ω

24 A



Industry’s lowest RDS(on) x area



Industry’s best FoM (figure of merit)



Ultra-low gate charge



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

This very high voltage N-channel Power

MOSFET is designed u

sing MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packaging

STB30N80K5

30N80K5

D²PAK

Tape and reel

1

3

TAB

D²PAK

2

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STB30N80K5 Datasheet(PDF) 1 Page - STMicroelectronics

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