Electrical characteristics

STB30N80K5

4/16

DocID028737 Rev 2

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS= 0 V

800

V

IDSS

Zero gate voltage

drain current

VGS= 0 V, VDS = 800 V

1

µA

VGS= 0 V, VDS = 800 V,

TC= 125 °C (1)

50

µA

IGSS

Gate source leakage

current

VDS= 0 V, VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDD = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 12 A

0.15

0.18

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS= 0 V

-

1530

-

pF

Coss

Output capacitance

-

145

-

pF

Crss

Reverse transfer

capacitance

-

1.2

-

pF

Co(er)(1)

Equivalent capacitance

energy related

VGS = 0 V,

VDS = 0 to 640 V

-

91

-

pF

Co(tr)(2)

Equivalent capacitance

time related

-

244

-

pF

Qg

Total gate charge

VDD = 640 V, ID = 24 A,

VGS = 10 V

(see Figure 16: "Test circuit

for gate charge behavior")

-

43

-

nC

Qgs

Gate-source charge

-

12.8

-

nC

Qgd

Gate-drain charge

-

24.2

-

nC

Rg

Gate input resistance

f =1 MHz, ID= 0 A

-

3.5

-

Ω

Notes:

(1)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS

(2)Time related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS