STB30N80K5

Electrical ratings

DocID028737 Rev 2

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

800

V

VGS

Gate-source voltage

±30

V

ID

Drain current (continuous) at TC = 25 °C

24

A

ID

Drain current (continuous) at TC = 100 °C

15

A

IDM(1)

Drain current (pulsed)

96

A

PTOT

Total dissipation at TC = 25 °C

250

W

dv/dt(2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

50

Tstg

Storage temperature range

- 55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD< 24 A, di/dt < 100 A/µs, VDSpeak < V (BR)DSS, VDD= 80% V(BR)DSS

(3)VDS= 640 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

30

°C/W

Notes:

(1)When mounted on FR-4 board of 1 inch², 2 oz Cu

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax.)

8

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

440

mJ