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CEF07N8 Datasheet(PDF) 2 Page - Chino-Excel Technology

Part # CEF07N8
Description  N-Channel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CET [Chino-Excel Technology]
Direct Link  http://www.cetsemi.com
Logo CET - Chino-Excel Technology

CEF07N8 Datasheet(HTML) 2 Page - Chino-Excel Technology

  CEF07N8 Datasheet HTML 1Page - Chino-Excel Technology CEF07N8 Datasheet HTML 2Page - Chino-Excel Technology CEF07N8 Datasheet HTML 3Page - Chino-Excel Technology CEF07N8 Datasheet HTML 4Page - Chino-Excel Technology CEF07N8 Datasheet HTML 5Page - Chino-Excel Technology  
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ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
6
DRAIN-SOURCE AVALANCHE RATING
a
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID = 250
µA
800
V
Zero Gate Voltage Drain Current
IDSS
VDS = 800V, VGS =0V
50
µA
Gate-Body Leakage
IGSS
VGS = 30V, VDS =0V
100
nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
VGS(th)
VDS =VGS,ID = 250
µA
24
Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID =4A
1.8
2.0
Ω
On-State Drain Current
ID(ON)
VGS = 10V, VDS =10V
3
A
S
Forward Transconductance
FS
g
VDS = 50V, ID =4A
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 400V,
ID =6A,
VGS =10V
RGEN=25
32
45
ns
ns
ns
ns
68
95
194
230
70
98
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =640V, ID = 6A,
VGS =10V
70
85
nC
nC
nC
8
36
Fall Time
6-138
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
EAS
IAS
VDD 50V, L=30.6mH
A
mJ
Ω
CEF07N8
7
RG=25
Ω
500
4



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