800

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

High power and current handling capability.

TO-220F full-pak for through hole

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V

Gate-Source Voltage

30

V

-Pulsed

4

A

A

Drain-Source Diode Forward Current

4

A

Maximum Power Dissipation

W

Operating and Storage Temperautre Range

-55 to 150

C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.5

65

/W

C

/W

C

Ω

@Tc=25 C

Derate above 25 C

50

0.4

W/ C

Drain Current-Continuous

S

G

D

6-137

PRELIMINARY

12

CEF07N8

TO-220F

S

D

G

6