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STF34N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF34N65M5
Description  N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in TO-220FP, I2PAKFP, I2PAK packages
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF34N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

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STF34N65M5, STFI34N65M5
Electrical characteristics
15
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d
(v)
Voltage delay time
V
DD
= 400 V, I
D
= 18 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see
Figure 17 and
Figure 20)
-59
-
ns
t
r
(v)
Voltage rise time
-
8.7
-
ns
t
f
(i)
Current fall time
-
7.5
-
ns
t
c
(off)
Crossing time
-
12
-
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
28
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
112
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 28 A, V
GS
= 0
-
1.5
V
t
rr
Reverse recovery time
I
SD
= 28 A, di/dt = 100 A/μs
V
DD
= 100 V (see
Figure 20)
-
350
ns
Q
rr
Reverse recovery charge
-
5.6
μC
I
RRM
Reverse recovery current
-
32
A
t
rr
Reverse recovery time
I
SD
= 28 A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 150 °C
(see
Figure 20)
-
422
ns
Q
rr
Reverse recovery charge
-
7.4
μC
I
RRM
Reverse recovery current
-
35
A



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