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STF34N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STF34N65M5
Description  N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in TO-220FP, I2PAKFP, I2PAK packages
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF34N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID025778 Rev 1
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STF34N65M5, STFI34N65M5
Electrical ratings
15
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25 °C
28
(1)
1.
Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C
17.7
(1)
A
I
DM
(1)
Drain current (pulsed)
112
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
35
W
dv/dt
(2)
2.
I
SD
≤ 28 A, di/dt ≤ 400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
=400 V.
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
3.
V
DS
≤ 480 V
MOSFET dv/dt ruggedness
50
V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
3.57
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or not repetitive
(pulse width limited by T
jmax
)
7A
E
AS
Single pulse avalanche energy (starting t
j
=25°C,
I
d
= I
AR
; V
dd
=50)
510
mJ



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