TCR2EF series, TCR2EE series

2019-06-20

5

© 2017-2019

Toshiba Electronic Devices & Storage Corporation

Electrical Characteristics

(Unless otherwise specified,

VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Output voltage accuracy

VOUT

IOUT = 50 mA (Note 6)

VOUT < 1.8 V

-18

―

+18

mV

1.8 V ≤ VOUT

-1.0

―

+1.0

%

Input voltage

VIN

IOUT = 1 mA

1.5

―

5.5

V

Line regulation

Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA

―

1

15

mV

Load regulation

Reg･load 1 mA ≤ IOUT ≤ 150 mA

―

15

30

mV

Quiescent current

IB

IOUT = 0 mA

―

35

60

μA

Stand-by current

IB (OFF) VCT = 0 V

―

0.1

1.0

μA

Dropout voltage

VDO

IOUT = 150 mA

(Note 7)

―

180

230

mV

Temperature coefficient

TCVO

−40°C ≤ Topr ≤ 85°C

―

100

―

ppm/°C

Output noise voltage

VNO

VIN = VOUT + 1 V, IOUT = 10 mA,

10 Hz ≤ f ≤ 100 kHz

(Note 7)

―

35

―

μVrms

Ripple rejection ratio

R.R.

VIN = VOUT + 1 V, IOUT = 10 mA,

f = 1 kHz, VRipple = 500 mVp-p

(Note 7)

―

73

―

dB

Load transient response

⊿

VOUT IOUT = 1 mA⇔150 mA, COUT = 1.0 μF

―

±60

―

mV

Control voltage (ON)

VCT (ON)

―

1.0

―

5.5

V

Control voltage (OFF)

VCT (OFF)

―

0

―

0.4

V

Note 6: Stable state with fixed IOUT condition

Note 7: The 2.5 V output product

Note 8: All characterisitcs of over 4.5 V output products are measured at VIN = VOUT + 0.5 V conditions.

Dropout voltage (IOUT = 150 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C)

Output voltages

Symbol

Min

Typ.

Max

Unit

1.0 V, 1.05 V

VDO

―

510

770

mV

1.1 V, 1.15 V

―

440

670

1.2 V, 1.25 V

―

380

570

1.3 V

―

350

470

1.4 V

―

310

420

1.5 V ≤ VOUT < 1.8 V

―

290

390

1.8 V ≤ VOUT < 2.5 V

―

230

310

2.5 V ≤ VOUT < 3.0 V

―

180

230

3.0 V ≤ VOUT ≤ 5.0 V

―

150

200