TCR2EF series, TCR2EE series

2019-06-20

14

© 2017-2019

Toshiba Electronic Devices & Storage Corporation

10) Control Transient Response

(Note) The above characteristics curves are presented for reference only and not guaranteed by production

test, unless otherwise noted.

VIN = 2.2 V,

CIN = 0.1 μF, COUT = 1 μF

VIN = 2.8 V,

CIN = 0.1 μF, COUT = 1 μF

VIN = 3.5 V,

CIN = 0.1 μF, COUT = 1 μF

0

200

400

1.2

1.3

1.1

0

200

400

2.5

2.6

2.4

0

200

400

1.8

1.9

1.7

0

200

400

3.0

3.1

2.9

VIN = 4.0 V,

CIN = 0.1 μF, COUT = 1 μF

Time t (25 μs/div)

Time t (25 μs/div)

VOUT = 1.2 V

(IOUT = 1 mA ⇔ 150 mA)

VOUT = 1.8 V

(IOUT = 1 mA ⇔ 150 mA)

VOUT = 2.5 V

(IOUT = 1 mA ⇔ 150 mA)

VOUT = 3.0 V

(IOUT = 1 mA ⇔ 150 mA)

Time t (25 μs/div)

Time t (25 μs/div)