VS-T..RIA Series

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Vishay Semiconductors

Revision: 27-Jul-2018

7

Document Number: 93756

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Fig. 13 - Maximum Non-Repetitive Surge Current

Fig. 14 - Maximum Non-Repetitive Surge Current

Fig. 15 - On-State Voltage Drop Characteristics

Fig. 16 - Gate Characteristics

700

800

900

1000

1100

1200

1300

1400

1500

110

100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

T70RIA.. Series

At Any Rated Load Condition And With

Rated V

Applied Following Surge.

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

J

RRM

600

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

0.01

0.1

1

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reapplied

Rated V

Reapplied

RRM

J

T70RIA.. Series

1

10

100

1000

00.5

11.5

22.5

33.5

4

T = 25°C

J

Instantaneous On-state Voltage (V)

T70RIA.. Series

T = 125°C

J

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

VGD

IGD

(b)

(a)

(1)

(2)

Instantaneous Gate Current (A)

a) Recommended load line for

b) Recommended load line for

Rectangular gate pulse

T70RIA.., T90RIA.. Series Frequency Limited by PG(AV)

tr=1µs, tp>=6µs

rated di/dt : 20V, 20ohms;

tr=0.5µs, tp>=6µs

<=30% rated di/dt : 15V, 40ohms

(1) PGM = 12W, tp = 5ms

(2) PGM = 30W, tp = 2ms

(3) PGM = 60W, tp = 1ms

(4) PGM = 200W, tp = 300µs

(3)

(4)